Effects of phonon scattering on discrete-impurity-induced current fluctuation in silicon nanowire transistors

Effects of phonon scattering on random-dopant-induced current fluctuations are investigated in silicon nanowire transistors. Active dopant distributions obtained through kinetic Monte Carlo simulation are introduced into 10nm-gate-length n-type nanowire transistors, and the current-voltage characteristics are calculated by the non-equilibrium Green´s function method. The current fluctuation is found to be suppressed by ~ 40% by phonon scatterings at the on-state, while it is very weakly affected at the off-state.