Title :
Performance advantage and energy saving of triangular-shaped FinFETs
Author :
Kehuey Wu ; Wei-Wen Ding ; Meng-Hsueh Chiang
Author_Institution :
Nat. Nano Device Labs., Hsinchu, Taiwan
Abstract :
Detailed comparisons of FinFETs with triangular and rectangular fins were performed using numerical simulations. Although, with the same leakage current (Ioff), the on current (Idsat) of the triangular fin is less than that of the rectangular one, the 3-stage ring oscillator (RO) with triangular fins runs faster than the one with rectangular fins and consumes less energy due to better short channel control and smaller parasitic capacitance. In addition, with the triangular shape, the two side-channel surfaces are no longer (110) and benefit from reduced negative bias temperature instability (NBTI). All these make the FinFET with a triangular fin a smart choice.
Keywords :
MOSFET; leakage currents; negative bias temperature instability; NBTI; energy saving; leakage current; negative bias temperature instability; parasitic capacitance; rectangular fin; ring oscillator; short channel control; side channel surface; triangular fin; triangular shaped FinFET; CMOS integrated circuits; Capacitance; Delays; FinFETs; Logic gates; Switches; CMOS; FinFET; Low Energy Device; Rectangular Fin; Tri-Gate; Triangular Fin;
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2013 International Conference on
Conference_Location :
Glasgow
Print_ISBN :
978-1-4673-5733-3
DOI :
10.1109/SISPAD.2013.6650595