Title :
A modified top-of-the-barrier model for graphene and its application to predict RF linearity
Author :
Alam, Ahsan U. ; Holland, Kyle D. ; Ahmed, Shehab ; Kienle, Diego ; Vaidyanathan, Mani
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Alberta, Edmonton, AB, Canada
Abstract :
We develop a modified top-of-the-barrier model (TBM) for simulating graphene FETs. Our model captures band-to-band (Klein-Zener) tunneling, which is important in zero-bandgap materials, and it accounts for variations in the densities of states between the channel and the source and drain regions. The model is benchmarked against a sophisticated self-consistent NEGF solver and shows very good quantitative agreement. The utility of our modified TBM is demonstrated by investigating and comparing the RF linearity of graphene FETs to that of CNFETs and conventional MOSFETs.
Keywords :
field effect transistors; graphene; nanotube devices; semiconductor device models; tunnelling; C; CNFET; Klein-Zener tunneling; RF linearity; TBM model; band-to-band tunneling; drain region; graphene FET; self-consistent NEGF solver; source region; top-of-the-barrier model; Graphene; Integrated circuit modeling; Linearity; Radio frequency; Reservoirs; Transistors; Tunneling; band-to-band tunneling; density of states; field-effect transistor; graphene; linearity; top-of-the-barrier model;
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2013 International Conference on
Conference_Location :
Glasgow
Print_ISBN :
978-1-4673-5733-3
DOI :
10.1109/SISPAD.2013.6650598
