A modified top-of-the-barrier model for graphene and its application to predict RF linearity

Author

Alam, Ahsan U. ; Holland, Kyle D. ; Ahmed, Shehab ; Kienle, Diego ; Vaidyanathan, Mani

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Alberta, Edmonton, AB, Canada

fYear

2013

fDate

3-5 Sept. 2013

Firstpage

155

Lastpage

158

Abstract

We develop a modified top-of-the-barrier model (TBM) for simulating graphene FETs. Our model captures band-to-band (Klein-Zener) tunneling, which is important in zero-bandgap materials, and it accounts for variations in the densities of states between the channel and the source and drain regions. The model is benchmarked against a sophisticated self-consistent NEGF solver and shows very good quantitative agreement. The utility of our modified TBM is demonstrated by investigating and comparing the RF linearity of graphene FETs to that of CNFETs and conventional MOSFETs.

Keywords

field effect transistors; graphene; nanotube devices; semiconductor device models; tunnelling; C; CNFET; Klein-Zener tunneling; RF linearity; TBM model; band-to-band tunneling; drain region; graphene FET; self-consistent NEGF solver; source region; top-of-the-barrier model; Graphene; Integrated circuit modeling; Linearity; Radio frequency; Reservoirs; Transistors; Tunneling; band-to-band tunneling; density of states; field-effect transistor; graphene; linearity; top-of-the-barrier model;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices (SISPAD), 2013 International Conference on

Conference_Location

Glasgow

ISSN

1946-1569

Print_ISBN

978-1-4673-5733-3

Type

conf

DOI

10.1109/SISPAD.2013.6650598

Filename

6650598