Title :
Expanding role of predictive TCAD in advanced technology development
Author :
Wu, Junyong ; Diaz, Carlos H.
Author_Institution :
TCAD Div., Taiwan Semicond. Manuf. Co. (TSMC), Hsinchu, Taiwan
Abstract :
TCAD plays an increasingly critical role in advanced technology research and development. The areas of impact expanded to not only predicting device outcome from process input, but also to topics traditionally not addressed by TCAD.
Keywords :
integrated circuit design; semiconductor device models; technology CAD (electronics); advanced technology development; advanced technology research; predictive TCAD; FinFETs; Logic gates; Predictive models; Semiconductor device modeling; Semiconductor process modeling; Stress; CMOS scaling; KMC; Predictive TCAD; atomistic; hierarchical; simulation; stress; variability;
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2013 International Conference on
Conference_Location :
Glasgow
Print_ISBN :
978-1-4673-5733-3
DOI :
10.1109/SISPAD.2013.6650601
