Title :
A new power MOSFET model including the variation of parameters with the temperature
Author :
Leonardi, C. ; Raciti, A. ; Frisina, F. ; Letor, R. ; Musumeci, S.
Author_Institution :
Dept. of Electr., Electron. & Syst. Eng., Catania Univ., Italy
Abstract :
A new PSpice model of power MOSFETs has been recently developed aiming to account for the parameter variations with temperature. The present paper discusses the new model in detail and reports static and dynamic validation tests at different working temperatures in the range 25-150°C on actual devices. Finally, the model is tested in applications where the power devices are connected in parallel or in series, in order to carry out specific information during critical behavior such as turn-on and turn-off transients
Keywords :
SPICE; circuit simulation; equivalent circuits; power MOSFET; semiconductor device models; transients; 25 to 150 degC; PSpice model; critical behavior; dynamic validation tests; parallel connection; parameter variation; power MOSFET model; series connection; static validation tests; turn-off transients; turn-on transients; working temperatures; Capacitance; Circuit simulation; MOSFET circuits; Parameter extraction; Power MOSFET; Power system modeling; Semiconductor process modeling; Temperature; Testing; Voltage;
Conference_Titel :
Devices, Circuits and Systems, 1998. Proceedings of the 1998 Second IEEE International Caracas Conference on
Conference_Location :
Isla de Margarita
Print_ISBN :
0-7803-4434-0
DOI :
10.1109/ICCDCS.1998.705845
