A new power MOSFET model including the variation of parameters with the temperature

Author

Leonardi, C. ; Raciti, A. ; Frisina, F. ; Letor, R. ; Musumeci, S.

Author_Institution

Dept. of Electr., Electron. & Syst. Eng., Catania Univ., Italy

fYear

1998

fDate

2-4 Mar 1998

Firstpage

261

Lastpage

266

Abstract

A new PSpice model of power MOSFETs has been recently developed aiming to account for the parameter variations with temperature. The present paper discusses the new model in detail and reports static and dynamic validation tests at different working temperatures in the range 25-150°C on actual devices. Finally, the model is tested in applications where the power devices are connected in parallel or in series, in order to carry out specific information during critical behavior such as turn-on and turn-off transients

Keywords

SPICE; circuit simulation; equivalent circuits; power MOSFET; semiconductor device models; transients; 25 to 150 degC; PSpice model; critical behavior; dynamic validation tests; parallel connection; parameter variation; power MOSFET model; series connection; static validation tests; turn-off transients; turn-on transients; working temperatures; Capacitance; Circuit simulation; MOSFET circuits; Parameter extraction; Power MOSFET; Power system modeling; Semiconductor process modeling; Temperature; Testing; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Devices, Circuits and Systems, 1998. Proceedings of the 1998 Second IEEE International Caracas Conference on

Conference_Location

Isla de Margarita

Print_ISBN

0-7803-4434-0

Type

conf

DOI

10.1109/ICCDCS.1998.705845

Filename

705845