• DocumentCode
    1988307
  • Title

    Impact of back-end-of-line on thermal impedance in SiGe HBTs

  • Author

    Sahoo, Abhaya Kumar ; Fregonese, Sebastien ; Weis, M. ; Maneux, Cristell ; Malbert, N. ; Zimmer, T.

  • Author_Institution
    Groupe Nanoelectronique, Univ. de Bordeaux, Talence, France
  • fYear
    2013
  • fDate
    3-5 Sept. 2013
  • Firstpage
    188
  • Lastpage
    191
  • Abstract
    In this paper, self-heating of a state-of-the-art SiGe:C BiCMOS Heterojunction Bipolar Transistor (HBT) is studied by means of 3D thermal TCAD simulations. Steady-state, large signal and small signal transient simulations are performed on different device structures to investigate the impact of backend layers on thermal impedance (ZTH). In addition, the simulation results are verified by DC and low frequency measurements and found to be in excellent agreement.
  • Keywords
    BiCMOS integrated circuits; Ge-Si alloys; electric impedance; heterojunction bipolar transistors; HBT; SiGe:C; back-end-of-line; low frequency measurements; self-heating; thermal impedance; Frequency measurement; Heating; Metals; Silicon; Temperature measurement; Transient analysis; Transistors; Electrothermal effects; Heterojunction Bipolar Transistors (HBTs); Numerical simulation; Semiconductor device measurements; Thermal impedance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices (SISPAD), 2013 International Conference on
  • Conference_Location
    Glasgow
  • ISSN
    1946-1569
  • Print_ISBN
    978-1-4673-5733-3
  • Type

    conf

  • DOI
    10.1109/SISPAD.2013.6650606
  • Filename
    6650606
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1988307