DocumentCode :
1988307
Title :
Impact of back-end-of-line on thermal impedance in SiGe HBTs
Author :
Sahoo, Abhaya Kumar ; Fregonese, Sebastien ; Weis, M. ; Maneux, Cristell ; Malbert, N. ; Zimmer, T.
Author_Institution :
Groupe Nanoelectronique, Univ. de Bordeaux, Talence, France
fYear :
2013
fDate :
3-5 Sept. 2013
Firstpage :
188
Lastpage :
191
Abstract :
In this paper, self-heating of a state-of-the-art SiGe:C BiCMOS Heterojunction Bipolar Transistor (HBT) is studied by means of 3D thermal TCAD simulations. Steady-state, large signal and small signal transient simulations are performed on different device structures to investigate the impact of backend layers on thermal impedance (ZTH). In addition, the simulation results are verified by DC and low frequency measurements and found to be in excellent agreement.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; electric impedance; heterojunction bipolar transistors; HBT; SiGe:C; back-end-of-line; low frequency measurements; self-heating; thermal impedance; Frequency measurement; Heating; Metals; Silicon; Temperature measurement; Transient analysis; Transistors; Electrothermal effects; Heterojunction Bipolar Transistors (HBTs); Numerical simulation; Semiconductor device measurements; Thermal impedance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2013 International Conference on
Conference_Location :
Glasgow
ISSN :
1946-1569
Print_ISBN :
978-1-4673-5733-3
Type :
conf
DOI :
10.1109/SISPAD.2013.6650606
Filename :
6650606
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1988307
بازگشت