Quantum confinement point of view for mobility and stress responses on (100) and (110) SingleGate and double-gate nMOSFETs

Author

Wang, Anson C-C ; Chen, Eason ; Tzer-Min Shen ; Wu, Junyong ; Diaz, Carlos H.

Author_Institution

TCAD Div., Taiwan Semicond. Manuf. Co. (TSMC), Hsinchu, Taiwan

fYear

2013

fDate

3-5 Sept. 2013

Firstpage

192

Lastpage

195

Abstract

Impact of quantum confinement on electron mobility and its stress responses for (100) and (110)-orientated single-gate (SG) and double-gate (DG) nMOSFETs is studied. Unstrained electron mobility in (110) DG nMOSFETs is found to be significantly higher than that of (110) SG devices. This paper discusses another physical explanation to the experimentally observed higher electron mobility in (110) FinFET sidewall channels as compared to that observed in planar (110) devices. It is also found that the electron mobility increases faster under uniaxial tensile stress for (110) devices than for (100) ones. The higher mobility in (110) DG devices is attributed to the lighter confinement effective mass of Δ4 valleys and the non-parabolicity of Δ2 valleys along the <;110> directions. With high enough tensile strain, DG nMOSFETs with (110) surface orientation are expected to outperform these on (100).

Keywords

MOSFET; electron mobility; DG devices; FinFET sidewall channels; double-gate nMOSFET; mobility reponse; planar devices; quantum confinement; single-gate nMOSFET; stress response; surface orientation; tensile strain; uniaxial tensile stress; unstrained electron mobility; Electron mobility; FinFETs; Rough surfaces; Silicon; Stress; Surface roughness; mobility; quantum confinement; single-gate and double-gate nMOSFETs; stress response;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices (SISPAD), 2013 International Conference on

Conference_Location

Glasgow

ISSN

1946-1569

Print_ISBN

978-1-4673-5733-3

Type

conf

DOI

10.1109/SISPAD.2013.6650607

Filename

6650607