Title :
3-D simulation of silicon oxidation: Challenges, progress and results
Author :
Guoy, Damrong ; Gencer, Alp H. ; Zhiqiang Tan ; Chalasani, Satish ; Johnson, Mark ; Villablanca, Luis ; Simeonov, S.
Author_Institution :
Synopsys, Inc., Mountain View, CA, USA
Abstract :
We report a new algorithm for solving the moving boundary problem of oxidation of silicon in 3D structures. The algorithm solves many of the boundary and mesh quality problems that makes 3D oxidation simulations challenging. Using this algorithm, we demonstrate that complicated 3D oxidation steps can be performed and results can be obtained in a reasonable amount of time.
Keywords :
elemental semiconductors; oxidation; semiconductor process modelling; silicon; 3D oxidation simulations; 3D simulation; 3D structures; Si; mesh quality problems; moving boundary problem; silicon oxidation; Oxidation; Semiconductor device modeling; Semiconductor process modeling; Silicon; Solid modeling; Surface treatment; Three-dimensional displays; LOCOS; Oxidation; moving boundary; trench oxidation;
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2013 International Conference on
Conference_Location :
Glasgow
Print_ISBN :
978-1-4673-5733-3
DOI :
10.1109/SISPAD.2013.6650608
