DocumentCode :
1988370
Title :
Improved optical and electrical property of ITO film prepared using a magnetron sputter type negative metal ion beam deposition method
Author :
Kim, D.I. ; Chun, H.-G. ; You, Y.Z. ; Lee, J.H. ; Cha, B.C. ; Choi, B.K.
Author_Institution :
Sch. of Mater. Sci. & Eng., Ulsan Univ., South Korea
fYear :
2005
fDate :
26 June-2 July 2005
Firstpage :
427
Lastpage :
429
Abstract :
This paper presents significant progress in the synthesis of transparent and conducting ITO thin films using a magnetron sputter type negative metal ion beam deposition method. The ITO films prepared at room temperature (<50°C) had the low resistivity of 5×10-4 Ω cm-1 and high optical transmittance of 84% in a visible region. According to a result obtained by AFM analysis, rms roughness of the films showed more flat surface morphology (1.0 nm) than that of the bare PC (1.5 nm) substrate. From optical transmission and electrical resistivity measurements, it can be concluded that the optoelectrical properties of ITO films strongly depend on the Cs presence in sputtering atmosphere.
Keywords :
atomic force microscopy; electric properties; optical properties; semiconductor thin films; sputter deposition; surface morphology; AFM analysis; ITO; ITO thin films; InSnO; electrical properties; flat surface morphology; low resistivity; magnetron sputter type negative metal ion beam deposition; optical properties; optical transmittance; optoelectrical properties; rms roughness; sputtering atmosphere; Conductivity; Indium tin oxide; Ion beams; Magnetic properties; Optical films; Particle beam optics; Rough surfaces; Sputtering; Surface roughness; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Science and Technology, 2005. KORUS 2005. Proceedings. The 9th Russian-Korean International Symposium on
Print_ISBN :
0-7803-8943-3
Type :
conf
DOI :
10.1109/KORUS.2005.1507749
Filename :
1507749
Link To Document :
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