TCAD modeling and simulation of non-resonant plasmonic THz detector based on asymmetric silicon MOSFETs

We report the experiments of plasmonic terahertz (THz) wave detector based on silicon field-effect transistors (FETs) in the nonresonant sub-THz (0.2 THz) regime. The detector responsivity (R_V) as a function of gate voltage has been successfully controlled by the radiation power in agreement with the plasma wave detection theory. To investigate the effects of the overdamped charge asymmetry on R_V, FET structure with the asymmetric source and drain area under the gate has been proposed. The enhanced R_V according to the increase of asymmetry ratio between source and drain region has been confirmed experimentally.