DocumentCode
1988392
Title
ESD Protection Design for Mixed-Voltage I/O Interfaces -- Overview
Author
Ker, Ming-Dou ; Lin, Kun-Hsien
Author_Institution
Institute of Electronics, National Chiao-Tung University, Hsinchu, Taiwan. E-mail: mdker@dieee.org
fYear
2005
fDate
19-21 Dec. 2005
Firstpage
493
Lastpage
498
Abstract
Electrostatic discharge (ESD) protection design for mixed-voltage I/O interfaces has been one of the key challenges of system-on-a-chip (SOC) implementation in nanoscale CMOS processes. This paper presents an overview on the design concept and circuit implementations of the ESD protection designs for mixed-voltage I/O interfaces without using the additional thick gate-oxide process. The ESD design constraints in mixed-voltage I/O interfaces, the classification, and analysis of ESD protection designs for mixed-voltage I/O interfaces are presented and discussed.
Keywords
CMOS process; CMOS technology; Circuits; Electrostatic discharge; MOS devices; Power system reliability; Protection; System-on-a-chip; Variable structure systems; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits, 2005 IEEE Conference on
Print_ISBN
0-7803-9339-2
Type
conf
DOI
10.1109/EDSSC.2005.1635316
Filename
1635316
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