• DocumentCode
    1988392
  • Title

    ESD Protection Design for Mixed-Voltage I/O Interfaces -- Overview

  • Author

    Ker, Ming-Dou ; Lin, Kun-Hsien

  • Author_Institution
    Institute of Electronics, National Chiao-Tung University, Hsinchu, Taiwan. E-mail: mdker@dieee.org
  • fYear
    2005
  • fDate
    19-21 Dec. 2005
  • Firstpage
    493
  • Lastpage
    498
  • Abstract
    Electrostatic discharge (ESD) protection design for mixed-voltage I/O interfaces has been one of the key challenges of system-on-a-chip (SOC) implementation in nanoscale CMOS processes. This paper presents an overview on the design concept and circuit implementations of the ESD protection designs for mixed-voltage I/O interfaces without using the additional thick gate-oxide process. The ESD design constraints in mixed-voltage I/O interfaces, the classification, and analysis of ESD protection designs for mixed-voltage I/O interfaces are presented and discussed.
  • Keywords
    CMOS process; CMOS technology; Circuits; Electrostatic discharge; MOS devices; Power system reliability; Protection; System-on-a-chip; Variable structure systems; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits, 2005 IEEE Conference on
  • Print_ISBN
    0-7803-9339-2
  • Type

    conf

  • DOI
    10.1109/EDSSC.2005.1635316
  • Filename
    1635316