DocumentCode :
1988435
Title :
Low power squaring and square root circuits using subthreshold MOS transistors
Author :
Nag, Amlan ; Paily, Roy P.
Author_Institution :
NIT Silchar, Silchar, India
fYear :
2009
fDate :
22-24 Dec. 2009
Firstpage :
96
Lastpage :
99
Abstract :
This paper describes how the translinear (TL) principle can be purposefully exploited for MOS transistors operating in subthreshold region. Due to the exponential current-voltage relationship of subthreshold MOS transistors, they are comparable with BJTs as far as TL principle is concerned. Here squaring and square rooting circuits are implemented using subthreshold MOS devices.
Keywords :
MIS devices; MOSFET; low-power electronics; BJT; TL principle; exponential current-voltage relationship; low power squaring circuits; square root circuits; square rooting circuits; subthreshold MOS devices; subthreshold MOS transistors; translinear principle; Circuit analysis; Dynamic range; Feedback circuits; Low voltage; MOS devices; MOSFETs; Negative feedback; Negative feedback loops; Performance analysis; Power engineering and energy; Subthreshold MOS; Translinear Principle; square rooting circuit; squaring circuit;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Emerging Trends in Electronic and Photonic Devices & Systems, 2009. ELECTRO '09. International Conference on
Conference_Location :
Varanasi
Print_ISBN :
978-1-4244-4846-3
Type :
conf
DOI :
10.1109/ELECTRO.2009.5441165
Filename :
5441165
Link To Document :
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