DocumentCode
1988446
Title
ESD Protection Circuit with Separated GGNMOS Segment for Input Protection
Author
Hwang, Sang Joon ; Lee, Chang Hun ; Jung, Min Chul ; Sung, Man Young
Author_Institution
Department of Electrical Engineering, Korea University, 1, 5-ka, Anam-dong, Sungbuk-ku, Seoul, South Korea, E-mail: semicad@korea.ac.kr
fYear
2005
fDate
19-21 Dec. 2005
Firstpage
511
Lastpage
514
Abstract
An ESD protection circuit in chip level protection is proposed as the electrostatic discharge (ESD) clamping circuit such as thick field oxide (TFO), grounded gate MOS (GGNMOS) and separated segment for input protection. The ESD protection circuit for input protection was implemented from the proposed ESD protection circuit. The GGNMOS applied to separated segment has been simulated by DESSIS of TCAD for thermal characteristic with human body model (HBM) pulse and realized the protection circuit for input protection has been simulated by HSPICE.
Keywords
Biological system modeling; Circuit simulation; Clamps; Electric breakdown; Electrostatic discharge; Humans; Integrated circuit reliability; Manufacturing processes; Protection; Thyristors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits, 2005 IEEE Conference on
Print_ISBN
0-7803-9339-2
Type
conf
DOI
10.1109/EDSSC.2005.1635320
Filename
1635320
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