Title :
A 950-MHz fully differential class-E power amplifier in 0.18µm CMOS for wireless communications
Author :
Datta, Sambit ; Saha, Hiranmay
Author_Institution :
Electron.&Electr. Commun. Eng., IIT Kharagpur, Kharagpur, India
Abstract :
This paper presents the design of a high efficiency, 950 MHz fully differential power amplifier for wireless communications in a standard 0.18 μm CMOS technology. The power amplifier employs a fully differential class-E topology to achieve high power efficiency by exploiting its soft-switching property. The concept of mode locking is used in the design, in which the amplifier acts as an oscillator whose output is forced to run at the input frequency. The proposed power amplifier can deliver 23.5 dBm output power to a 50Ω load at 950 MHz with 41% power-added efficiency (PAE) from 1.8 V supply voltage.
Keywords :
CMOS integrated circuits; power amplifiers; radio networks; CMOS technology; class-E power amplifier; frequency 950 MHz; power-added efficiency; resistance 50 ohm; size 0.18 μm; soft-switching property; voltage 1.8 V; wireless communications; CMOS technology; Communication standards; Differential amplifiers; Frequency; High power amplifiers; Laser mode locking; Oscillators; Power amplifiers; Topology; Wireless communication; CMOS radio frequency (RF); Class-E power amplifier; power-added efficiency; wireless communication;
Conference_Titel :
Emerging Trends in Electronic and Photonic Devices & Systems, 2009. ELECTRO '09. International Conference on
Conference_Location :
Varanasi
Print_ISBN :
978-1-4244-4846-3
DOI :
10.1109/ELECTRO.2009.5441167
