Title :
Performance analysis of a bandgap engineered Silicon bipolar transistor
Author :
Vishal ; Ammar ; Chauhan, R.K.
Author_Institution :
Dept. of Electron. & Commun. Eng., M.M.M. Eng. Coll., Gorakhpur, India
Abstract :
Silicon-Germanium Heterojunction Bipolar Transistor (SiGe HBTs) represents the first practical bandgap-engineered Silicon-based transistor. The design issues related to SiGe HBT that makes it suitable for high speed application has been explored. Emphasis has been given to the requirement of low base resistance for achieving a reasonable value of gain at a high frequency. Compared to Silicon bipolar transistors much higher values of gain are obtained for such HBTs.
Keywords :
Ge-Si alloys; energy gap; heterojunction bipolar transistors; semiconductor heterojunctions; SiGe; SiGe HBT; bandgap engineered silicon bipolar transistor; bandgap-engineered silicon-based transistor; low base resistance; performance analysis; silicon bipolar transistors; silicon-germanium heterojunction bipolar transistor; Bipolar transistors; Consumer electronics; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Microprocessors; Performance analysis; Photonic band gap; Silicon alloys; Silicon germanium; Bandgap Engineering; Ge; Normalized gain; Si; SiGe HBT;
Conference_Titel :
Emerging Trends in Electronic and Photonic Devices & Systems, 2009. ELECTRO '09. International Conference on
Conference_Location :
Varanasi
Print_ISBN :
978-1-4244-4846-3
DOI :
10.1109/ELECTRO.2009.5441168
