Fast 3D electro-thermal device/circuit simulation based on automated interaction of SDevice and HSpice simulators

Author

Chvala, Ales ; Donoval, Daniel ; Marek, Jiri ; Pribytny, Patrik ; Molnar, Miklos

Author_Institution

Inst. of Electron. & Photonics, Slovak Univ. of Technol. in Bratislava, Bratislava, Slovakia

fYear

2013

fDate

3-5 Sept. 2013

Firstpage

224

Lastpage

227

Abstract

Automated interaction of SDevice and HSpice for fast 3D electro-thermal simulation based on the relaxation method is designed. The features and limitations of the method are analyzed and presented. A power vertical super-junction MOSFET under the unclamped inductive switching (UIS) test of device robustness is used to perform validation of the designed electro-thermal simulation.

Keywords

SPICE; circuit simulation; power MOSFET; semiconductor device testing; HSpice simulators; SDevice simulators; automated interaction; circuit simulation; fast 3D electro-thermal device simulation; power vertical super-junction MOSFET; relaxation method; unclamped inductive switching test; Finite element analysis; Integrated circuit modeling; MOSFET; Solid modeling; Temperature; Temperature dependence; Three-dimensional displays; 3D electro-thermal simulation; HSpice; SDevice; UIS test; super-junction MOSFET;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices (SISPAD), 2013 International Conference on

Conference_Location

Glasgow

ISSN

1946-1569

Print_ISBN

978-1-4673-5733-3

Type

conf

DOI

10.1109/SISPAD.2013.6650615

Filename

6650615