Subthreshold current modeling of surrounding gate MOSFET: A gaussian approach

Author

Roy, Palash ; Syamal, Binit ; Mohankumar, N. ; Sarkar, C.K.

Author_Institution

Dept. of Electron. & Telecommun. Eng., Jadavpur Univ., Kolkata, India

fYear

2009

fDate

22-24 Dec. 2009

Firstpage

70

Lastpage

73

Abstract

We have developed an analytical subthreshold drain current model along with subthreshold swing for surrounding gate (SG MOSFET) MOSFETs. The model is derived from direct use of the Gaussian law rather than using Poisson equation as has been implemented earlier. The models for current and swing have been verified by comparison with 3-D numerical results for different channel lengths, channel thickness and oxide thickness: a very good agreement with the numerical simulations has been observed.

Keywords

Gaussian processes; MOSFET; numerical analysis; Gaussian approach; Poisson equation; numerical simulations; subthreshold current modeling; subthreshold swing; surrounding gate MOSFET; Argon; Boundary conditions; CMOS technology; MOSFET circuits; Numerical simulation; Poisson equations; Polynomials; Semiconductor device modeling; Silicon; Subthreshold current; Subthreshold current; Subthreshold swing; inversion charge; surface potential; surrounding gate (SG MOSFET);

fLanguage

English

Publisher

ieee

Conference_Titel

Emerging Trends in Electronic and Photonic Devices & Systems, 2009. ELECTRO '09. International Conference on

Conference_Location

Varanasi

Print_ISBN

978-1-4244-4846-3

Type

conf

DOI

10.1109/ELECTRO.2009.5441170

Filename

5441170