Title :
Subthreshold current modeling of surrounding gate MOSFET: A gaussian approach
Author :
Roy, Palash ; Syamal, Binit ; Mohankumar, N. ; Sarkar, C.K.
Author_Institution :
Dept. of Electron. & Telecommun. Eng., Jadavpur Univ., Kolkata, India
Abstract :
We have developed an analytical subthreshold drain current model along with subthreshold swing for surrounding gate (SG MOSFET) MOSFETs. The model is derived from direct use of the Gaussian law rather than using Poisson equation as has been implemented earlier. The models for current and swing have been verified by comparison with 3-D numerical results for different channel lengths, channel thickness and oxide thickness: a very good agreement with the numerical simulations has been observed.
Keywords :
Gaussian processes; MOSFET; numerical analysis; Gaussian approach; Poisson equation; numerical simulations; subthreshold current modeling; subthreshold swing; surrounding gate MOSFET; Argon; Boundary conditions; CMOS technology; MOSFET circuits; Numerical simulation; Poisson equations; Polynomials; Semiconductor device modeling; Silicon; Subthreshold current; Subthreshold current; Subthreshold swing; inversion charge; surface potential; surrounding gate (SG MOSFET);
Conference_Titel :
Emerging Trends in Electronic and Photonic Devices & Systems, 2009. ELECTRO '09. International Conference on
Conference_Location :
Varanasi
Print_ISBN :
978-1-4244-4846-3
DOI :
10.1109/ELECTRO.2009.5441170
