Title :
Influence of temperature on the standard deviation of electromigration lifetimes
Author :
de Orio, R.L. ; Ceric, H. ; Selberherr, Siegfried
Author_Institution :
Inst. for Microelectron., Tech. Univ. Wien, Vienna, Austria
Abstract :
The electromigration (EM) lifetime standard deviation dependence on temperature for copper damascene interconnects is investigated. An analytical expression for the standard deviation as a function of temperature is obtained based on error propagation analysis applied to a typical EM-induced void growth model. It is shown that good agreement with experimental results is obtained. Furthermore, the impact of such an analysis on the extrapolation of EM lifetimes to use conditions is discussed.
Keywords :
copper; electromigration; extrapolation; integrated circuit interconnections; integrated circuit reliability; voids (solid); copper damascene interconnects; electromigration lifetime standard deviation; error propagation analysis; extrapolation; temperature on; void growth model; Electromigration; Extrapolation; Life estimation; Reliability; Resistance; Standards; Temperature distribution;
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2013 International Conference on
Conference_Location :
Glasgow
Print_ISBN :
978-1-4673-5733-3
DOI :
10.1109/SISPAD.2013.6650617
