Title :
Evaluation of spin lifetime in strained UT2B silicon-on-insulator MOSFETs
Author :
Osintsev, Dmitri ; Sverdlov, Viktor ; Selberherr, Siegfried
Author_Institution :
Inst. for Microelectron., Tech. Univ. Wien, Vienna, Austria
Abstract :
We investigate the surface roughness induced spin relaxation in scaled spin MOSFETs. We show that the regions in the momentum space, responsible for strong spin relaxation, can be efficiently removed by applying uniaxial strain. The spin lifetime in strained films can be improved by orders of magnitude, while the momentum relaxation time determining the electron mobility can only be increased by a factor of two.
Keywords :
MOSFET; electron mobility; semiconductor device models; silicon-on-insulator; surface roughness; electron mobility; relaxation time; spin lifetime; strained UT2B silicon-on-insulator MOSFET; strained films; surface roughness induced spin relaxation; uniaxial strain; Films; Phonons; Rough surfaces; Scattering; Silicon; Strain; Surface roughness; phonon relaxation; shear strain; surface-roughness relaxation; ultra-scaled SOI MOSFETs;
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2013 International Conference on
Conference_Location :
Glasgow
Print_ISBN :
978-1-4673-5733-3
DOI :
10.1109/SISPAD.2013.6650618
