Title :
Transient charge-based model for SiGe HBTs
Author :
Jacob, Jobymol ; DasGupta, Amitava ; Chakravorty, Anjan
Author_Institution :
Dept. of Electr. Eng., IIT Madras, Chennai, India
Abstract :
A compact model for silicon germanium heterojunction bipolar transistor based on transient integral charge-control (TICC) relations is presented. Partitioning factors are extracted from the numerically simulated data. A thorough analysis based on the transient and AC results has been carried out for checking the suitability of the model. No convergence problem is observed in transient simulation. The model shows acceptable accuracy in the phase behavior from low frequency up to transit frequency.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; HBT; SiGe; heterojunction bipolar transistor; transient integral charge-control relations; Closed-form solution; Electron emission; Equations; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit modeling; Jacobian matrices; Medical simulation; Silicon germanium; Base charge partitioning; QS approximation; SiGe HBTs; TICC Relations;
Conference_Titel :
Emerging Trends in Electronic and Photonic Devices & Systems, 2009. ELECTRO '09. International Conference on
Conference_Location :
Varanasi
Print_ISBN :
978-1-4244-4846-3
DOI :
10.1109/ELECTRO.2009.5441172
