• DocumentCode
    1988619
  • Title

    Pr, Ce:YAlO3 laser operation at room temperature

  • Author

    Fibrich, Martin ; Jelínková, Helena ; Nejezchleb, Karel ; Koda, Václav

  • Author_Institution
    Fac. of Nucl. Sci. & Phys. Eng., Czech Tech. Univ. in Prague, Prague, Czech Republic
  • fYear
    2011
  • fDate
    Aug. 28 2011-Sept. 1 2011
  • Firstpage
    1572
  • Lastpage
    1574
  • Abstract
    Spectroscopic properties and laser results of GaN-diode pumped Pr, Ce:YAlO3 crystal at room temperature are reported. The polarization-resolved absorption and emission spectra have been recorded and the decay time of 3P0 manifold has been measured. The concentration of Pr3+ and Ce3+ ions in YAlO3 (YAP) matrix were 0.6 and 0.1 at. %, respectively. Output power of 30 mW at 747 nm wavelength with slope efficiency of 7 % with respect to the absorbed power has been demonstrated.
  • Keywords
    III-V semiconductors; cerium; gallium compounds; light absorption; luminescence; optical pumping; praseodymium; solid lasers; wide band gap semiconductors; yttrium compounds; Ce:YAlO3; GaN-diode pumped crystal; Pr,Ce:YAlO3 laser operation; Pr:YAlO3; emission spectra; polarization-resolved absorption; spectroscopic properties; temperature 293 K to 298 K; Crystals; Laser beams; Laser excitation; Optics; Pump lasers; Semiconductor lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Quantum Electronics Conference & Lasers and Electro-Optics (CLEO/IQEC/PACIFIC RIM), 2011
  • Conference_Location
    Sydney, NSW
  • Print_ISBN
    978-1-4577-1939-4
  • Type

    conf

  • DOI
    10.1109/IQEC-CLEO.2011.6193883
  • Filename
    6193883
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1988619