A novel approach for modeling the threshold voltage of cylindrical Ion Sensitive Field Effect Transistor

Author

Roy, Mohendra ; Sharma, Santanu

Author_Institution

Dept. of Electron. & Commun. Eng., Tezpur Univ., Tezpur, India

fYear

2009

fDate

22-24 Dec. 2009

Firstpage

53

Lastpage

57

Abstract

There is an increasing demand of Biosensors many branch of science and technology. The Ion Sensitive Field Effect Transistor (ISFET) is one of the most essential components of ion sensing biosensor. ISFET is a field effect transistor having ion sensing capability. It has got countless potential to fabricate sophisticated sensing devices. In this article, an effort has been taken to ascribe the effect of the cylindrical shape over the sensitivity of ISFET. A reduce in threshold voltage has been noticed in the cylindrical ISFET as compared to that of the planer one. The present work highlights the change in threshold voltage of Planer and cylindrical ISFET with respect to pH.

Keywords

biosensors; ion sensitive field effect transistors; pH measurement; cylindrical ion sensitive field effect transistor; ion sensing biosensor; pH measurement; planer ISFET; threshold voltage; Biomedical measurements; Biosensors; CMOS technology; Electrodes; FETs; MOSFET circuits; Metalworking machines; Photonics; Silicon; Threshold voltage; Cylindrical ISFET; ISFET; MOSFET; Threshold voltage; pH;

fLanguage

English

Publisher

ieee

Conference_Titel

Emerging Trends in Electronic and Photonic Devices & Systems, 2009. ELECTRO '09. International Conference on

Conference_Location

Varanasi

Print_ISBN

978-1-4244-4846-3

Type

conf

DOI

10.1109/ELECTRO.2009.5441174

Filename

5441174