• DocumentCode
    1988672
  • Title

    A Compact, Analytical Two-dimensional Threshold Voltage Model for Cylindrical, Fully-depleted, Surrounding-Gate(SG) MOSFETs

  • Author

    Chiang, T.K.

  • Author_Institution
    Department of Electronic Engineering, the Southern Taiwan University of Technology, Taiwan, E-mail: tkchiang@mail.stut.edu.tw
  • fYear
    2005
  • fDate
    19-21 Dec. 2005
  • Firstpage
    547
  • Lastpage
    550
  • Abstract
    Based on two-dimensional(2D) potential analysis, a compact, analytical model for threshold voltage in cylindrical, fully-depleted, surrounding-gate(SG) MOSFETs is derived. The minimum surface potential μmin,surfaceis used to develop the threshold voltage model. Besides decreasing the characteristic factor, both the thin silicon body and gate oxide can reduce the threshold voltage roll-off simultaneously. It is also found that the threshold voltage shift is dependent on the scaling factor of λ1L. The high scaling factor is preferred to alleviate threshold voltage degradation.
  • Keywords
    Analytical models; Computational modeling; Degradation; MOSFETs; Numerical simulation; Physics; Semiconductor process modeling; Silicon; Threshold voltage; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits, 2005 IEEE Conference on
  • Print_ISBN
    0-7803-9339-2
  • Type

    conf

  • DOI
    10.1109/EDSSC.2005.1635330
  • Filename
    1635330
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1988672