DocumentCode :
1988677
Title :
TCAD study of Single Photon Avalanche Diode on 0.35μm high voltage technology
Author :
Roger, F. ; Teva, Jordi ; Wachmann, E. ; Jong Mun Park ; Minixhofer, Rainer
Author_Institution :
ams AG, Schloss Premstaetten, Austria
fYear :
2013
fDate :
3-5 Sept. 2013
Firstpage :
252
Lastpage :
255
Abstract :
This paper presents the electrical and optical behavior of Single Photon Avalanche Diode. Key parameters as reverse breakdown voltage, spectral responsivity, photon detection probability, dark count rate and time delay of the diode are extracted from dedicated TCAD simulations.
Keywords :
avalanche diodes; electric breakdown; technology CAD (electronics); TCAD study; dark count rate; electrical behavior; high voltage technology; optical behavior; photon detection probability; reverse breakdown voltage; single photon avalanche diode; size 0.35 mum; spectral responsivity; time delay; Cathodes; Electric breakdown; Junctions; Light sources; Photonics; Silicon; Thyristors; Breakdown; DCR; Geiger-mode; PDP; SPAD; TCAD; time delay;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2013 International Conference on
Conference_Location :
Glasgow
ISSN :
1946-1569
Print_ISBN :
978-1-4673-5733-3
Type :
conf
DOI :
10.1109/SISPAD.2013.6650622
Filename :
6650622
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1988677
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