Title :
Simulation Study of Charge Imbalance in Super-junction Power MOSFET
Author_Institution :
Department of Electronic Engineering, the Konkuk-University, Seoul, South Korea, E-mail: pnkondekar@yahoo.com
Abstract :
Here, we studied the effect of the gate voltage on the forward blocking capability of the super-junction power transistor, with the help of simulation results. The reduction of the forward blocking capability and the underlying physics for different cases of possible drift layer doping level variation are explained with help of potential contours and electric field profiles.
Keywords :
Current density; Doping profiles; Electric breakdown; Electric potential; MOSFET circuits; Neodymium; Physics; Power MOSFET; Power transistors; Threshold voltage;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2005 IEEE Conference on
Print_ISBN :
0-7803-9339-2
DOI :
10.1109/EDSSC.2005.1635331
