• DocumentCode
    1988722
  • Title

    An Analytical Parameter Extraction of the Small-Signal Model for RF MOSFETs

  • Author

    Chi, Y.S. ; Lu, J.X. ; Zhang, S.Y. ; Wu, Z.J. ; Huang, F.Y.

  • Author_Institution
    Institute of RF & OE-ICs, Dept of Radio Engineering, Southeast University, Nanjing, China, 210096
  • fYear
    2005
  • fDate
    19-21 Dec. 2005
  • Firstpage
    555
  • Lastpage
    558
  • Abstract
    An analytical method to directly extract the MOSFET small-signal model parameters including non-quais-static and substrate effect from S-parameter is presented. This method only relies on S-parameter measured in active region and is verified by RF MOSFET fabricated in 0.13 μm CMOS technology. Good agreement is obtained between the simulated results and the measured data up to 30 GHz.
  • Keywords
    CMOS technology; Data mining; Electrical resistance measurement; Equivalent circuits; MOSFETs; Parameter extraction; Radio frequency; Roentgenium; Scattering parameters; Semiconductor device modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits, 2005 IEEE Conference on
  • Print_ISBN
    0-7803-9339-2
  • Type

    conf

  • DOI
    10.1109/EDSSC.2005.1635332
  • Filename
    1635332
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1988722