Title :
An Analytical Parameter Extraction of the Small-Signal Model for RF MOSFETs
Author :
Chi, Y.S. ; Lu, J.X. ; Zhang, S.Y. ; Wu, Z.J. ; Huang, F.Y.
Author_Institution :
Institute of RF & OE-ICs, Dept of Radio Engineering, Southeast University, Nanjing, China, 210096
Abstract :
An analytical method to directly extract the MOSFET small-signal model parameters including non-quais-static and substrate effect from S-parameter is presented. This method only relies on S-parameter measured in active region and is verified by RF MOSFET fabricated in 0.13 μm CMOS technology. Good agreement is obtained between the simulated results and the measured data up to 30 GHz.
Keywords :
CMOS technology; Data mining; Electrical resistance measurement; Equivalent circuits; MOSFETs; Parameter extraction; Radio frequency; Roentgenium; Scattering parameters; Semiconductor device modeling;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2005 IEEE Conference on
Print_ISBN :
0-7803-9339-2
DOI :
10.1109/EDSSC.2005.1635332
