Title :
Simulation of MOSFET Devices and Circuits Fabricated on Selective Buried Oxide (SEL-BOX) Substrates
Author :
Pal, Chander ; Mazhari, Baquer ; Iyer, S. Sundar Kumar
Author_Institution :
Open Silicon Inc., Bangalore, India
Abstract :
Device fabricated on selective buried oxide (SEL-BOX) substrates have the potential for high performance while overcoming the drawbacks of floating body effects that afflict silicon on insulator (SOI) devices. Thus SEL-BOX technology is ideally suited for System-on-Chip applications. This paper reports simulation studies of MOSFETs fabricated on SEL-BOX substrates and compares the device and circuit characteristics with those of devices on SOI and bulk-silicon substrates. The ability to control device parameters, especially the device threshold voltage, by varying the spacing in the buried oxide and the scalability of devices makes SEL-BOX a promising technology.
Keywords :
Circuit simulation; Contacts; Isolation technology; Lead compounds; MOSFET circuits; Nanoscale devices; Parasitic capacitance; Silicon on insulator technology; Substrates; Threshold voltage;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2005 IEEE Conference on
Print_ISBN :
0-7803-9339-2
DOI :
10.1109/EDSSC.2005.1635333