DocumentCode :
1988774
Title :
Efficient Wigner function simulation for nanowire MOSFETs and comparison to Quantum Drift-Diffusion
Author :
Badami, O. ; Saha, D. ; Ganguly, Shaumik
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol. Bombay, Mumbai, India
fYear :
2013
fDate :
3-5 Sept. 2013
Firstpage :
272
Lastpage :
275
Abstract :
In this paper, we have developed a full Quantum Device Simulator by solving the Wigner equation in the mode space for a cylindrical nanowire MOSFET. A novel and efficient numerical technique to solve the Wigner equation has been developed. It´s comparison with the LU decomposition method shows that significant improvement in the simulation time is obtained. Comparison of the results obtained from the Wigner equation and Quantum Drift Diffusion method suggests that later can be continued to be used after suitable adjustments to the mobility and effective masses (across the transport). Timing comparison of the Wigner equation and QDD formalism indicates that the later is more than 200 times faster than the Wigner equation.
Keywords :
MOSFET; nanowires; quantum optics; MOSFET; Wigner function simulation; decomposition method; nanowire; quantum device simulator; quantum drift-diffusion method; Equations; MOSFET; Mathematical model; Poisson equations; Schrodinger equation; Sparse matrices; Generalized Einstein´s relatiosship; Quantum Drift Diffusion; Quantum Wigner Equation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2013 International Conference on
Conference_Location :
Glasgow
ISSN :
1946-1569
Print_ISBN :
978-1-4673-5733-3
Type :
conf
DOI :
10.1109/SISPAD.2013.6650627
Filename :
6650627
Link To Document :
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