Improving subthreshold MSB-EMC simulations by dynamic particle weighting

The study of current and futures nanodevices demands a special focus on the subthreshold regime for switching and power consumption considerations. MSB-EMC simulators represent one of the best options for the study of ultimate CMOS devices offering the most detailed description of carrier transport. However, several issues derived from the charge discretization process and the statistical nature of the technique limit the application to subthreshold regime. This paper presents a method for statistical enhancement including dynamical calculation of electron-particle equivalent (EPE) values with position and bias dependence in order to extend the application of MSB-EMC simulators to subthreshold regime in a feasible way from a CPU and memory requirements point of view.