A new transistor of dual-gate SOI and evidence for diminished short channel effects

Author

Anvarifard, Mohamad Kazem ; Armaki, Mahdi Gordi ; Hosseini, Seyed Ebrahim

Author_Institution

Dept. of Eng., Sabzevar Tarbiat Moallem Univ., Sabzevar, Iran

fYear

2009

fDate

22-24 Dec. 2009

Firstpage

29

Lastpage

32

Abstract

In this paper a new transistor of dual-gate (DG) silicon-on- insulator (SOI) MOSFET is presented. The objects of this paper are to use a voltage difference between the two gates to screen the drain voltage and therefore reduce short channel effects (SCEs). In this transistor the surface potential exhibits a step function, which causes the screening of the drain potential. This results in suppressed SCEs such as the hot-carrier effect and decreasing off-current with respect to shrinking of channel length. The obtained results of our transistor are compared to single gate (SG) SOI MOSFET that shows the DG SOI MOSFET performance is superior. The transistor has been simulated by SILVACO software.

Keywords

MOSFET; hot carriers; silicon-on-insulator; surface potential; SILVACO software; drain potential; drain voltage; dual-gate silicon-on-insulator MOSFET; hot-carrier effect; short channel effects; surface potential; Controllability; Doping; Hot carrier effects; Insulation; MOSFET circuits; Semiconductor devices; Semiconductor films; Silicon on insulator technology; Transistors; Voltage; DG SOI; SOI; hot-carrier; short channel;

fLanguage

English

Publisher

ieee

Conference_Titel

Emerging Trends in Electronic and Photonic Devices & Systems, 2009. ELECTRO '09. International Conference on

Conference_Location

Varanasi

Print_ISBN

978-1-4244-4846-3

Type

conf

DOI

10.1109/ELECTRO.2009.5441180

Filename

5441180