• DocumentCode
    1988811
  • Title

    Enhanced Mobility for Pentacene TFT Built on NH3- Annealed Thermally Grown SiO2

  • Author

    Kwan, M.C. ; Cheng, Kenneth K H ; Lai, P.T. ; Che, C.M.

  • Author_Institution
    Department of Electrical and Electronic Engineering, the University of Hong Kong, Pokfulam Road, Hong Kong
  • fYear
    2005
  • fDate
    19-21 Dec. 2005
  • Firstpage
    567
  • Lastpage
    570
  • Abstract
    We have enhanced the mobility of pentacene OTFTs using NH3-annealed SiO2as gate dielectric and this annealing method is often applied in the semiconductor industry for inorganic transistors. The device has field-effect mobility higher than 0.5 cm2/Vs, with on/off current ratio larger than 106, and subthreshold slope less than 2.5 V per decade. When compared with the control sample, which uses N2-annealed SiO2, the mobility of the proposed pentacene OTFT increases by over 50%.
  • Keywords
    Annealing; Dielectrics; Electric variables measurement; Organic materials; Organic thin film transistors; Pentacene; Radiofrequency identification; Thickness measurement; Thin film transistors; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits, 2005 IEEE Conference on
  • Print_ISBN
    0-7803-9339-2
  • Type

    conf

  • DOI
    10.1109/EDSSC.2005.1635336
  • Filename
    1635336
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1988811