Title :
Enhanced Mobility for Pentacene TFT Built on NH3- Annealed Thermally Grown SiO2
Author :
Kwan, M.C. ; Cheng, Kenneth K H ; Lai, P.T. ; Che, C.M.
Author_Institution :
Department of Electrical and Electronic Engineering, the University of Hong Kong, Pokfulam Road, Hong Kong
Abstract :
We have enhanced the mobility of pentacene OTFTs using NH3-annealed SiO2as gate dielectric and this annealing method is often applied in the semiconductor industry for inorganic transistors. The device has field-effect mobility higher than 0.5 cm2/Vs, with on/off current ratio larger than 106, and subthreshold slope less than 2.5 V per decade. When compared with the control sample, which uses N2-annealed SiO2, the mobility of the proposed pentacene OTFT increases by over 50%.
Keywords :
Annealing; Dielectrics; Electric variables measurement; Organic materials; Organic thin film transistors; Pentacene; Radiofrequency identification; Thickness measurement; Thin film transistors; Threshold voltage;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2005 IEEE Conference on
Print_ISBN :
0-7803-9339-2
DOI :
10.1109/EDSSC.2005.1635336
