• DocumentCode
    1988848
  • Title

    An analytical model for organic thin film transistors

  • Author

    Li, Ling ; Kosina, Hans

  • Author_Institution
    Institute for Microelectronics, TU Vienna, Gusshausstrasse 27-29, A-1040 Vienna, Austria. ling.li@iue.tuwien.ac.at
  • fYear
    2005
  • fDate
    19-21 Dec. 2005
  • Firstpage
    571
  • Lastpage
    574
  • Abstract
    An analytical model that describes the DC characteristics of organic thin film transistors (OTFTs) is presented. The model is based on the variable range hopping theory, i.e. thermally activated tunneling of carriers between localized states. As verified by published data, the model provides an accurate and efficient prediction for transfer characteristics and output characteristics of OTFT via simple formulations.
  • Keywords
    Analytical models; Conductivity; Crystallization; FETs; MOSFETs; Organic semiconductors; Organic thin film transistors; Thin film transistors; Tunneling; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits, 2005 IEEE Conference on
  • Print_ISBN
    0-7803-9339-2
  • Type

    conf

  • DOI
    10.1109/EDSSC.2005.1635337
  • Filename
    1635337
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1988848