Title :
Impact of back biasing in ultra short channel UTBB SOI nMOSFETs
Author :
Kai Zhao ; Tiao Lu ; Gang Du ; Xiao-yan Liu ; Xing Zhang
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
Abstract :
The impact of back biasing on electron transport in extreme short channel Ultra-Thin Body and BOX (UTBB) SOI MOSFETs is investigated by a deterministic multi-subband Boltzmann solver. A 7.5nm channel length UTBB device is simulated, and its transport details are presented in this paper.
Keywords :
Boltzmann equation; MOSFET; semiconductor device models; silicon-on-insulator; BOX layer; Boltzmann transport equation; back biasing; buried oxide; deterministic multisubband Boltzmann solver; electron transport; size 7.5 nm; ultra short channel UTBB SOI nMOSFET; ultra-thin body; Electric potential; Logic gates; MOSFET; Mathematical model; Modulation; Scattering; Silicon; Boltzmann transport equation (BTE); UTBB; back biasing; quasi-ballistic transport;
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2013 International Conference on
Conference_Location :
Glasgow
Print_ISBN :
978-1-4673-5733-3
DOI :
10.1109/SISPAD.2013.6650631
