DocumentCode
1988852
Title
Impact of back biasing in ultra short channel UTBB SOI nMOSFETs
Author
Kai Zhao ; Tiao Lu ; Gang Du ; Xiao-yan Liu ; Xing Zhang
Author_Institution
Inst. of Microelectron., Peking Univ., Beijing, China
fYear
2013
fDate
3-5 Sept. 2013
Firstpage
288
Lastpage
291
Abstract
The impact of back biasing on electron transport in extreme short channel Ultra-Thin Body and BOX (UTBB) SOI MOSFETs is investigated by a deterministic multi-subband Boltzmann solver. A 7.5nm channel length UTBB device is simulated, and its transport details are presented in this paper.
Keywords
Boltzmann equation; MOSFET; semiconductor device models; silicon-on-insulator; BOX layer; Boltzmann transport equation; back biasing; buried oxide; deterministic multisubband Boltzmann solver; electron transport; size 7.5 nm; ultra short channel UTBB SOI nMOSFET; ultra-thin body; Electric potential; Logic gates; MOSFET; Mathematical model; Modulation; Scattering; Silicon; Boltzmann transport equation (BTE); UTBB; back biasing; quasi-ballistic transport;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices (SISPAD), 2013 International Conference on
Conference_Location
Glasgow
ISSN
1946-1569
Print_ISBN
978-1-4673-5733-3
Type
conf
DOI
10.1109/SISPAD.2013.6650631
Filename
6650631
Link To Document