DocumentCode :
1988881
Title :
Meshing strategy of equivalent substrate schematic in SMART power IC
Author :
Conte, Fabrizio Lo ; Sallese, Jean-Michel ; Kayal, Maher
Author_Institution :
Electron. Lab. (e-Lab..epfl.ch), EPFL, Lausanne, Switzerland
fYear :
2011
fDate :
15-18 May 2011
Firstpage :
821
Lastpage :
824
Abstract :
In this paper, a modeling methodology able to create an equivalent schematic of an High-Voltage integrated circuit is developed. The equivalent schematic is based on enhanced model of diodes and resistances, accounting for minority and majority carrier propagation at their boundary. In this work, the methodology to interconnect these elements in order to be able to model multi-dimensional current path is developed and applied to an industrial H-Bridge architecture. The coupled parasitic currents obtained with the equivalent schematic are compared against measurements and confirm that the model is accurate and can be used to estimate substrate parasitic signals.
Keywords :
power integrated circuits; SMART power IC; coupled parasitic currents; equivalent substrate schematic; high-voltage integrated circuit; industrial H-bridge architecture; majority carrier propagation; meshing strategy; multidimensional current path model; substrate parasitic signal estimation; Current measurement; Finite element methods; Integrated circuit modeling; Junctions; Resistance; Substrates; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems (ISCAS), 2011 IEEE International Symposium on
Conference_Location :
Rio de Janeiro
ISSN :
0271-4302
Print_ISBN :
978-1-4244-9473-6
Electronic_ISBN :
0271-4302
Type :
conf
DOI :
10.1109/ISCAS.2011.5937692
Filename :
5937692
Link To Document :
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