DocumentCode
1988950
Title
Performance evaluation of p-channel FinFETs using 3D ensemble Monte Carlo simulation
Author
Riddet, C. ; Towie, E.A. ; Asenov, Asen
Author_Institution
Device Modelling Group, Univ. of Glasgow, Glasgow, UK
fYear
2013
fDate
3-5 Sept. 2013
Firstpage
312
Lastpage
315
Abstract
The impact of alternative channel materials in p-channel FinFETs is considered here using a combination of 3D drift diffusion and ensemble Monte Carlo simulations. This simulation approach allows both the electrostatics and the drive current of these devices to be properly evaluated in determining the potential performance improvement that can be derived from these devices.
Keywords
MOSFET; Monte Carlo methods; electrostatics; semiconductor device models; 3D drift diffusion; 3D ensemble Monte Carlo simulation; alternative channel materials; drive current; electrostatics; p-channel FinFET; performance evaluation; FinFETs; Monte Carlo methods; Performance evaluation; Scattering; Silicon; Strain; FinFET; Germanium; Monte Carlo; SiGe; Silicon; strain;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices (SISPAD), 2013 International Conference on
Conference_Location
Glasgow
ISSN
1946-1569
Print_ISBN
978-1-4673-5733-3
Type
conf
DOI
10.1109/SISPAD.2013.6650637
Filename
6650637
Link To Document