Effects of oxidation temperature on Ga2O3film thermally grown on GaN

Author

Lin, Limin ; Luo, Yi ; Lai, P.T. ; Lau, Kei May

Author_Institution

Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong

fYear

2005

fDate

19-21 Dec. 2005

Firstpage

605

Lastpage

608

Abstract

The effects of oxidation temperature on thermally oxidized GaN film were investigated. The GaN wafers were oxidzied at 750°C, 800°C and 850°C respectively. The electrical characteristics and interface quality of MOS capacitors were compared among different oxidation temperatures. The sample oxidized at 800°C presented best current-voltage, capacitance-voltage characteristics and smoothest surface morphology, while the higher oxidation temperature of 850°C gave best interface quality. The electrical breakdown field was increased by one order of magnitude when the sample was oxidized at 800°C as compared with 750°C and 850°C. Lastly, after the sample oxidized at 800°C was annealed at 850°C for 10 min, the quality of its oxide was significantly degraded.

Keywords

Annealing; Capacitance-voltage characteristics; Degradation; Electric breakdown; Electric variables; Gallium nitride; MOS capacitors; Oxidation; Surface morphology; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits, 2005 IEEE Conference on

Print_ISBN

0-7803-9339-2

Type

conf

DOI

10.1109/EDSSC.2005.1635346

Filename

1635346

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1989044