Title :
Effects of oxidation temperature on Ga2O3film thermally grown on GaN
Author :
Lin, Limin ; Luo, Yi ; Lai, P.T. ; Lau, Kei May
Author_Institution :
Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong
Abstract :
The effects of oxidation temperature on thermally oxidized GaN film were investigated. The GaN wafers were oxidzied at 750°C, 800°C and 850°C respectively. The electrical characteristics and interface quality of MOS capacitors were compared among different oxidation temperatures. The sample oxidized at 800°C presented best current-voltage, capacitance-voltage characteristics and smoothest surface morphology, while the higher oxidation temperature of 850°C gave best interface quality. The electrical breakdown field was increased by one order of magnitude when the sample was oxidized at 800°C as compared with 750°C and 850°C. Lastly, after the sample oxidized at 800°C was annealed at 850°C for 10 min, the quality of its oxide was significantly degraded.
Keywords :
Annealing; Capacitance-voltage characteristics; Degradation; Electric breakdown; Electric variables; Gallium nitride; MOS capacitors; Oxidation; Surface morphology; Temperature;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2005 IEEE Conference on
Print_ISBN :
0-7803-9339-2
DOI :
10.1109/EDSSC.2005.1635346
