• DocumentCode
    1989065
  • Title

    InGaP PHEMT with a Liquid Phase Oxidized InGaP as Gate Dielectric

  • Author

    Lee, Kuan-Wei ; Sze, Po-Wen ; Lee, Kai-Lin ; Houng, Mau-Phon ; Wang, Yeong-Her

  • Author_Institution
    Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan 701, Taiwan, Republic of China.
  • fYear
    2005
  • fDate
    19-21 Dec. 2005
  • Firstpage
    609
  • Lastpage
    612
  • Abstract
    The In0.49Ga0.51, P/In0.15Ga0.85As/GaAs metal-oxide-semiconductor pseudomorphic high electron mobility transistor (MOS-PHEMT) not only has the advantages of the MOS structure but also has the two-dimensional electron gas channel. The gate dielectric is obtained by the oxidization of the InGaP layer using liquid phase method. As compared to its counterpart PHEMTs, the proposed MOS-PHEMTs have larger gate swing voltages, lower gate leakage currents, and higher breakdown voltages.
  • Keywords
    Dielectric liquids; Electron mobility; Gallium arsenide; Gate leakage; HEMTs; Leakage current; MODFETs; Oxidation; PHEMTs; Thermal stability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits, 2005 IEEE Conference on
  • Print_ISBN
    0-7803-9339-2
  • Type

    conf

  • DOI
    10.1109/EDSSC.2005.1635347
  • Filename
    1635347
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1989065