DocumentCode
1989084
Title
Accelerated variation simulation through parameter reduction
Author
Griffin, W. Paul ; Roy, Kaushik
Author_Institution
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
fYear
2013
fDate
3-5 Sept. 2013
Firstpage
336
Lastpage
339
Abstract
Proper understanding of the effects of parameter variations in a circuit requires simulation; unfortunately, accurate variation simulation can hinder simulation performance. Even though the majority of interdie variations occur between four parameters (L, W, tox, Vfb) [1], this parameter set is still too big for efficient large-scale simulations. As these variations all affect threshold voltage (Vth), ΔVth is often used as a substitute for variations [2], [3]. While a ΔVth substitute offers vast improvement in runtime, it has a rarely-understood loss in quality. In this work, we demonstrate two methods that, when presented with a set of device variations (L, W, tox, Vfb) and a model, can simplify those variations into a reusable model that provides accelerated simulation. Our first method, approximate ΔVgs superposition, offers an accelerated method to reduce process variations down a single, manageable ΔVth-like parameter. Our second, reduced parameter method, preserves the effects of individual variations while lowering the runtime complexity. Instead of generating device attributes specific to the tested circuit, our method used a dynamic superposition approach to interpolate device parameters from a reduced-dimension lookup table. Both of our methods demonstrate significant runtime computation savings, with a low break-even point as compared to the original model. While the ΔVgs approach does demonstrate a noticeable quality loss compared to the original model, our reduced parameter approach demonstrates minimal loss in quality.
Keywords
MOSFET; circuit simulation; interpolation; semiconductor device models; table lookup; accelerated variation simulation; device variations; dynamic superposition; lookup table; parameter reduction; parameter variations; reusable model; runtime complexity; tested circuit; threshold voltage; Acceleration; Integrated circuit modeling; Random access memory; Runtime; Semiconductor device modeling; Threshold voltage; Transistors; MOSFET; Parameter variations; nanoscale;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices (SISPAD), 2013 International Conference on
Conference_Location
Glasgow
ISSN
1946-1569
Print_ISBN
978-1-4673-5733-3
Type
conf
DOI
10.1109/SISPAD.2013.6650643
Filename
6650643
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