A new concept for high voltage MCCT with no J-FET resistance by using a very thin wafer

A high voltage non-punch-through MCCT with newly developed thyristor-centered cells was successfully fabricated for the first time. A 4.22 mm/spl square/ high voltage MCCT with its blocking voltage of 1460 V was fabricated using an inexpensive and an extremely thin bulk wafer of 200 /spl mu/m with low breakage rate of less than 4%. This low breakage rate can be attained by the improvement of wafer grinding method to smooth the wafer edge and so on. Less junction-FET resistance and the thin bulk wafer application are highly effective to achieve a superior electrical characteristic to the punch-through type device using an epi wafer.