Title :
Simulation of CBRAM devices with the level set method
Author :
Dorion, P. ; Cueto, O. ; Reyboz, M. ; Vianello, E. ; Barbe, J.C. ; Grigoriu, A. ; Maday, Y.
Author_Institution :
LETI MINATEC, CEA, Grenoble, France
Abstract :
A TCAD model for Chalcogenide based CBRAM is introduced. This model relies on the level set method to follow the growth of the filament in the electrolyte. We couple the level set method with physical equations which model the cations migration and the electric field in the electrolyte and in the filament. The formation and the dissolution of the filament can be simulated. Comparisons between simulations and electrical results are used to validate our model.
Keywords :
electrolytes; integrated circuit modelling; random-access storage; CBRAM devices; TCAD model; cations migration; chalcogenide based CBRAM; dissolution; electric field; electrolyte; level set method; physical equations; Conductivity; Electric potential; Electrodes; Equations; Level set; Mathematical model; Switches;
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2013 International Conference on
Conference_Location :
Glasgow
Print_ISBN :
978-1-4673-5733-3
DOI :
10.1109/SISPAD.2013.6650644
