DocumentCode :
1989148
Title :
Properties of gallium selenide doped with sulfur from melt and from gas phase
Author :
Voevodina, O.V. ; Morozov, AN ; Sarkisov, S.Yu. ; Bereznaya, S.A. ; Korotchenko, Z.V. ; Dikov, D.E.
Author_Institution :
Siberian Physico-Tech. Inst., Tomsk, Russia
fYear :
2005
fDate :
26 June-2 July 2005
Firstpage :
551
Lastpage :
555
Abstract :
This paper presents the results of investigation on influence of doping with sulfur and annealing in sulfur atmosphere on properties of promising nonlinear optical gallium selenide crystals, grown by the Bridgeman method from melts with content of sulfur 0.01-3 mass % and annealed in sulfur atmosphere.
Keywords :
III-VI semiconductors; annealing; doping; gallium compounds; nonlinear optics; sulphur; Bridgeman method; GaSe:S; nonlinear optical crystals; sulfur atmosphere; Annealing; Atmosphere; Conductivity; Crystals; Doping; Gallium compounds; Gases; Nonlinear optics; Optical films; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Science and Technology, 2005. KORUS 2005. Proceedings. The 9th Russian-Korean International Symposium on
Print_ISBN :
0-7803-8943-3
Type :
conf
DOI :
10.1109/KORUS.2005.1507780
Filename :
1507780
Link To Document :
بازگشت