A unified model of metallic filament growth dynamics for conductive-bridge random access memory (CBRAM)

Author

Shengjun Qin ; Jinyu Zhang ; Zhiping Yu

Author_Institution

Inst. of Microelectron., Tsinghua Univ., Beijing, China

fYear

2013

fDate

3-5 Sept. 2013

Firstpage

344

Lastpage

347

Abstract

A unified model is developed for the first time to explain the metallic filament growth from either anode or cathode for conductive-bridge random access memory (CBRAM). Both electrochemical reactions and ion/electron transport are considered. Simulation results reveal that diffusion coefficient and mobility of cations in the electrolyte are responsible for determining the growth direction of the conductive metallic-filament. The simulation results for the forming process of CBRAM are compared to experimental data and good agreement is achieved.

Keywords

anodes; carrier mobility; cathodes; diffusion; electrolytes; random-access storage; CBRAM; cations mobility; conductive bridge random access memory; conductive metallic filament; diffusion coefficient; electrochemical reactions; growth direction; ion-electron transport; metallic filament growth dynamics; unified model; Anodes; Cathodes; Mathematical model; Metals; Oxidation; Simulation; Surface treatment; CBRAM; Conductive-bridge random access memory; growth direction; metallic filament;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices (SISPAD), 2013 International Conference on

Conference_Location

Glasgow

ISSN

1946-1569

Print_ISBN

978-1-4673-5733-3

Type

conf

DOI

10.1109/SISPAD.2013.6650645

Filename

6650645