DocumentCode
1989205
Title
Surface-roughness-scattering in non-planar channels — The role of band anisotropy
Author
Stanojevic, Zlatan ; Kosina, Hans
Author_Institution
Inst. for Microelectron., Tech. Univ. Wien, Vienna, Austria
fYear
2013
fDate
3-5 Sept. 2013
Firstpage
352
Lastpage
355
Abstract
In this work, we investigate the effect of band structure anisotropy and channel orientation on SRS in non-planar channels such as tri-gate and GAA structures. A new formalism is introduced for calculating SRS rates for non-planar structures. The formalism is an extension of the theory by Prange and Nee for planar structures, which has been widely used for calculating the conductivity of inversion layers and thin films. We derive matrix elements for open and closed surfaces of arbitrary shape taking anisotropy of the band structure fully into account. Numerical experiments performed on tri-gate and GAA cross-sections indicate that SRS is greatly influenced by band anisotropy and channel orientation.
Keywords
band structure; surface roughness; surface scattering; GAA structures; SRS rates; arbitrary shape; band anisotropy; band structure anisotropy; channel orientation; inversion layers; matrix elements; nonplanar channels; nonplanar structures; surface-roughness-scattering; thin films; tri-gate structures; Anisotropic magnetoresistance; Correlation; Logic gates; Rough surfaces; Scattering; Silicon; Surface roughness;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices (SISPAD), 2013 International Conference on
Conference_Location
Glasgow
ISSN
1946-1569
Print_ISBN
978-1-4673-5733-3
Type
conf
DOI
10.1109/SISPAD.2013.6650647
Filename
6650647
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