• DocumentCode
    1989205
  • Title

    Surface-roughness-scattering in non-planar channels — The role of band anisotropy

  • Author

    Stanojevic, Zlatan ; Kosina, Hans

  • Author_Institution
    Inst. for Microelectron., Tech. Univ. Wien, Vienna, Austria
  • fYear
    2013
  • fDate
    3-5 Sept. 2013
  • Firstpage
    352
  • Lastpage
    355
  • Abstract
    In this work, we investigate the effect of band structure anisotropy and channel orientation on SRS in non-planar channels such as tri-gate and GAA structures. A new formalism is introduced for calculating SRS rates for non-planar structures. The formalism is an extension of the theory by Prange and Nee for planar structures, which has been widely used for calculating the conductivity of inversion layers and thin films. We derive matrix elements for open and closed surfaces of arbitrary shape taking anisotropy of the band structure fully into account. Numerical experiments performed on tri-gate and GAA cross-sections indicate that SRS is greatly influenced by band anisotropy and channel orientation.
  • Keywords
    band structure; surface roughness; surface scattering; GAA structures; SRS rates; arbitrary shape; band anisotropy; band structure anisotropy; channel orientation; inversion layers; matrix elements; nonplanar channels; nonplanar structures; surface-roughness-scattering; thin films; tri-gate structures; Anisotropic magnetoresistance; Correlation; Logic gates; Rough surfaces; Scattering; Silicon; Surface roughness;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices (SISPAD), 2013 International Conference on
  • Conference_Location
    Glasgow
  • ISSN
    1946-1569
  • Print_ISBN
    978-1-4673-5733-3
  • Type

    conf

  • DOI
    10.1109/SISPAD.2013.6650647
  • Filename
    6650647