All-CMOS subbandgap reference circuit operating at low supply voltage

Author

Yang, Yi ; Binkley, David M. ; Li, Lu ; Gu, Changzhan ; Li, Changzhi

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of North Carolina at Charlotte, Charlotte, NC, USA

fYear

2011

fDate

15-18 May 2011

Firstpage

893

Lastpage

896

Abstract

This paper presents a CMOS subbandgap reference circuit operating at a low supply voltage. To support low-voltage operation, the subbandgap reference circuit uses nMOS transistors operating in weak inversion and a bulk-driven amplifier. Measurements of a chip fabricated in AMI 0.5 μm CMOS technology show that the subbandgap reference can operate with a 1 V supply voltage to produce a reference voltage of 337 mV with a temperature coefficient of 9.9 ppm/°C and a voltage coefficient of 290 ppm/V over the temperature range of 10 °C to 100°C. Measurements of a chip fabricated in UMC 0.13 μm CMOS technology indicate the capability of operation with a 0.4 V supply voltage.

Keywords

CMOS integrated circuits; MOSFET; amplifiers; reference circuits; AMI CMOS technology; CMOS subbandgap reference circuit; low supply voltage; nMOS transistor; reference supply voltage; size 0.13 mum; size 0.5 mum; temperature 10 degC to 100 degC; temperature coefficient; voltage 0.4 V; voltage 1 V; voltage 337 mV; voltage coefficient; weak inversion bulk-driven amplifier; BiCMOS integrated circuits; CMOS integrated circuits; CMOS technology; Logic gates; Temperature distribution; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems (ISCAS), 2011 IEEE International Symposium on

Conference_Location

Rio de Janeiro

ISSN

0271-4302

Print_ISBN

978-1-4244-9473-6

Electronic_ISBN

0271-4302

Type

conf

DOI

10.1109/ISCAS.2011.5937710

Filename

5937710