DocumentCode :
1989250
Title :
All-CMOS subbandgap reference circuit operating at low supply voltage
Author :
Yang, Yi ; Binkley, David M. ; Li, Lu ; Gu, Changzhan ; Li, Changzhi
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of North Carolina at Charlotte, Charlotte, NC, USA
fYear :
2011
fDate :
15-18 May 2011
Firstpage :
893
Lastpage :
896
Abstract :
This paper presents a CMOS subbandgap reference circuit operating at a low supply voltage. To support low-voltage operation, the subbandgap reference circuit uses nMOS transistors operating in weak inversion and a bulk-driven amplifier. Measurements of a chip fabricated in AMI 0.5 μm CMOS technology show that the subbandgap reference can operate with a 1 V supply voltage to produce a reference voltage of 337 mV with a temperature coefficient of 9.9 ppm/°C and a voltage coefficient of 290 ppm/V over the temperature range of 10 °C to 100°C. Measurements of a chip fabricated in UMC 0.13 μm CMOS technology indicate the capability of operation with a 0.4 V supply voltage.
Keywords :
CMOS integrated circuits; MOSFET; amplifiers; reference circuits; AMI CMOS technology; CMOS subbandgap reference circuit; low supply voltage; nMOS transistor; reference supply voltage; size 0.13 mum; size 0.5 mum; temperature 10 degC to 100 degC; temperature coefficient; voltage 0.4 V; voltage 1 V; voltage 337 mV; voltage coefficient; weak inversion bulk-driven amplifier; BiCMOS integrated circuits; CMOS integrated circuits; CMOS technology; Logic gates; Temperature distribution; Temperature measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems (ISCAS), 2011 IEEE International Symposium on
Conference_Location :
Rio de Janeiro
ISSN :
0271-4302
Print_ISBN :
978-1-4244-9473-6
Electronic_ISBN :
0271-4302
Type :
conf
DOI :
10.1109/ISCAS.2011.5937710
Filename :
5937710
Link To Document :
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