Title :
An analytical model for predicting forming/switching time in conductive-bridge resistive random-access memory (CBRAM)
Author :
Shaoli Lv ; Jun Liu ; Lingling Sun ; He Wang ; Jinyu Zhang ; Zhiping Yu
Author_Institution :
Key Lab. of RF Circuits & Syst. (designated by Minist. of Educ. in China), Hangzhou Dianzi Univ., Hangzhou, China
Abstract :
Analytical solutions (i.e., compact model) to differential equations governing the surface movement of conductive filament (CF) in CBRAM have been developed. Time needed for forming and switching of memory cell can readily be evaluated based on the device structure and the applied bias. The accuracy of the model has been verified by comparison to both experimental and numerical simulation results for Ag-GeS2-W CBRAM cells.
Keywords :
differential equations; germanium compounds; numerical analysis; random-access storage; silver; tungsten; Ag-GeS2-W; CBRAM memory cell; CF; conductive filament; conductive-bridge resistive random-access memory cell; differential equation; forming-switching time prediction; numerical simulation; surface movement; Analytical models; Anodes; Cathodes; Differential equations; Integrated circuit modeling; Random access memory; Switches; CBRAM; cation migration; filament growth;
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2013 International Conference on
Conference_Location :
Glasgow
Print_ISBN :
978-1-4673-5733-3
DOI :
10.1109/SISPAD.2013.6650650
