Title :
Performance of an InP MISFET X-Band Oscillator and K-Band Oscillator-Doubler
Author :
Soares, R. ; Castelletto, J.P. ; Legaud, P. ; Armand, M.
Author_Institution :
Centre National d´´Etudes des Télécommunications, LAB/MER/MLS - B.P. 40, 22301 LANNION CEDEX - FRANCE
Abstract :
Results for an InP MISFET 1.5 ¿m × 300 ¿m device used as an oscillator and an oscillator doubler are presented. A fundamental frequency oscillator using the transistor in the reverse channel mode and dielectric resonator stabilised was designed to operate at 9.8 GHz and supplied 80 mW output power at this frequency with RF/dc efficiency of 9%. The second harmonic oscillator gave 12.6 mW at 19.6 GHz with 1.7% RF/dc efficiency.
Keywords :
Dielectrics; Indium phosphide; Insulation; K-band; MISFETs; Oscillators; Power amplifiers; Power generation; Radio frequency; Voltage;
Conference_Titel :
Microwave Conference, 1984. 14th European
Conference_Location :
Liege, Belgium
DOI :
10.1109/EUMA.1984.333406
