Reverse channel floating base emitter switched thyristor (RFB-EST)

This paper presents a novel EST (Emitter Switched Thyristor) called Reverse Channel Floating Base EST (RFB-EST). This structure is a combination of a Reverse Channel IGBT (RC-IGBT) and a thyristor-NMOS configuration. The thyristor has a floating p-base connected with the cathode electrode by a self-controlled PMOSFET which functions as an active diverter. This enables the device to have a low on-state voltage drop and big safe operating area. Due to the RC-IGBT configuration, the parasitic thyristor latch-up immunity is improved drastically, and as a result the maximum controllable current density is 3 times enlarged even at 200/spl deg/C as compared to that of the LIGBT. Besides the other merits of the RFB-EST, a solution to solve the problem induced by the undesired parasitic thyristor latch-up of LIGBTs and LESTs is achieved.