Comparison of raised source/drain Implant-Free Quantum-Well and Tri-gate MOSFETs using 3D Monte Carlo simulation

In this paper we examine the impact of a raised source/drain architecture on the performance of single-gate and multi-gate, high mobility channel MOSFETs. We make use of 3D Monte Carlo (MC) simulations to predict the performance of InGaAs n-type and Germanium (Ge) p-type MOSFETs. The transition from a raised source/drain Implant-Free QuantumWell (IFQW) MOSFET to an Implant-Free Tri-gate MOSFET is expected to show both improved electrostatic behaviour and better drive current due to the larger gated channel area. We show that although significant electrostatic improvement is demonstrated in the tri-gate case, there is poor on-current performance in comparison to the IFQW MOSFET due to increased access resistance to the fin channel from the raised source/drain.