Title :
Quantitative full 3D blooming analysis on 1.4um BSI CMOS image sensor
Author :
Sengoku, Mitsuhiro ; Yoshimura, Hiroyuki ; Sugiura, Yuta ; Shimizu, Shogo ; Hasumi, Ryoji ; Monoi, Makoto
Author_Institution :
TCAD Group, Toshiba I.S. Corp., Oita, Japan
Abstract :
3D TCAD analysis of blooming for 1.4 μm CMOS image sensor (CIS) with two-shared pixel structure has been performed. Its blooming behavior has been modeled and clear design guidelines for potential control inside CIS pixels have been obtained.
Keywords :
CMOS image sensors; technology CAD (electronics); 3D TCAD analysis; BSI CMOS image sensor; CIS; backside illumination; quantitative full 3D blooming analysis; size 1.4 mum; two-shared pixel structure; CMOS image sensors; Electric potential; Lighting; Semiconductor device modeling; Semiconductor process modeling; Three-dimensional displays; Transistors; Blooming; CMOS Image Sensor; TCAD;
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2013 International Conference on
Conference_Location :
Glasgow
Print_ISBN :
978-1-4673-5733-3
DOI :
10.1109/SISPAD.2013.6650659
