Quantum transport simulation of Bilayer pseudoSpin Field-Effect Transistor (BiSFET) with tight-binding hartree-fock model

Author

Xuehao Mou ; Register, Leonard F. ; Banerjee, Sanjay K.

Author_Institution

Microelectron. Res. Center, Univ. of Texas at Austin, Austin, TX, USA

fYear

2013

fDate

3-5 Sept. 2013

Firstpage

420

Lastpage

423

Abstract

A simulation tool for modeling superfluid quantum transport in the proposed Bilayer Psuedo-spin Field Effect Transistor (BiSFET) and related systems is described and demonstrated. An interlayer Fock exchange interaction is incorporated into a π-orbital based atomistic tight-binding model of transport in two graphene layers separated by a tunnel barrier. Simulation results support and extend expectations based on bulk analysis such as superfluid condensate formation, enhanced interlayer tunneling and the sub-thermal voltage (sub-k_BT/q) switching. Extension of this method to other quasi-two dimensional material systems should be possible as well.

Keywords

HF calculations; field effect transistors; graphene; semiconductor device models; superfluidity; tight-binding calculations; tunnelling; BiSFET; C; atomistic tight-binding model; bilayer pseudospin field effect transistor; graphene layers; interlayer Fock exchange interaction; interlayer tunneling; quantum transport simulation; subthermal voltage switching; superfluid condensate formation; superfluid quantum transport; tight binding Hartree-Fock model; tunnel barrier; Atomic layer deposition; Couplings; Elementary particle exchange interactions; Graphene; Photonic band gap; Switches; Tunneling; BiSFET; Fock exchange; atomistic tight binding; graphene; quantum transport; superfluid condensate;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices (SISPAD), 2013 International Conference on

Conference_Location

Glasgow

ISSN

1946-1569

Print_ISBN

978-1-4673-5733-3

Type

conf

DOI

10.1109/SISPAD.2013.6650664

Filename

6650664